Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor
نویسندگان
چکیده
منابع مشابه
Monte Carlo Simulations of Spin Transport in a Strained Nanoscale InGaAs Field Effect Transistor
Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with a Bloch equation model using a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2017
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4994148